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  Datasheet File OCR Text:
 LESHAN RADIO COMPANY, LTD.
High-Frequency Amplifier NPN Transistor
L 3838QT1
L2SC3838QT1
3
1 2
3.2
SC-59
3 COLLECTOR
Absolute maximum ratings (Ta=25 oC)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 20 11 3 50 0.2 150 - 55~+150 Unit V V V mA W
o o
1 BASE
2 EMITTER
C C
Device Marking
L2SC3838QT1=R25
Electrical characteristics (Ta=25 oC)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb'*Cc NF Min. 20 11 3 120
Typ.
-
Max.
-
Unit V V V uA uA V GHz pF IC = 10 A IC = 1mA IE = 10 A VCB = 10V,IE=0 VEB = 2V,IC=0 IC/IB = 10mA/5mA VCE/IC = 10V/5mA
Conditions
0.5 0.5 0.5 270 1.5 12 -
1.4
-
3.2 0.8 4 3.5
VCB = 10V , IC = 10mA , f = 500MHz VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50
ps
dB
L2SC3838QT1-1/2
LESHAN RADIO COMPANY, LTD.
L2SC3838QT1
SC-59
C H K
J
A L S 3 2 1 D B
G
DIN
MILLIMETERS MIN MAX MIN
INCHES MAX
A B C D G H J K L S
2.70 1.3 1.00 0.35 1.70 0.0130 0.1 0.20 1.25 2.50
3.10 1.70 1.30 0.50 2.10 0.100 0.26 0.60 1.65 3.00
0.1063 0.0512 0.0394 0.0138 0.0670 0.0005 0.0040 0.0079 0.0493 0.0985
0.1220 0.0669 0.0511 0.0196 0.0826 0.00040 0.0102 0.0236 0.0649 0.1181
L2SC3838QT1-2/2


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